2N7002ET1G
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Краткое описание:
MOSFET N-CH 60V 260mA SOT-23 2.5R T/R
Дополнительная информация
N-channel MOSFET transistor in a SOT-23-3 package. Features a 60V drain-source breakdown voltage and a maximum continuous drain current of 260mA. Offers a low drain-source on-resistance of 2.5 Ohms. Operates with a nominal gate-source voltage of 1V and a maximum gate-source voltage of 20V. Includes fast switching characteristics with a turn-on delay of 1.7ns and a fall time of 1.2ns. RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.94mm |
| Length | 2.9mm |
| Polarity | N-CHANNEL |
| Fall Time | 1.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.5R |
| Nominal Vgs | 1V |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 26.7pF |
| Power Dissipation | 300mW |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4.8ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 260mA |
| Drain-source On Resistance-Max | 2.5R |
| Drain to Source Breakdown Voltage | 60V |
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