2N7002K-T1-E3

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2N7002K-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-Channel MOSFET, 60V, 300mA, 2R Rds(on), SOT-23
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET transistor for general-purpose small signal applications. Features a continuous drain current of 300mA and a drain-source breakdown voltage of 70V. Offers a low drain-source on-resistance (Rds On) of 2 Ohms. Operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 surface-mount package. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.02mm
Length 3.04mm
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 2R
Nominal Vgs 2V
Package/Case SOT-23-3
Polarization N
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 30pF
Power Dissipation 350mW
Threshold Voltage 2V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant Unknown
Max Power Dissipation 200mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 7.5R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 300mA
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 2R
Drain to Source Breakdown Voltage 70V

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