2N7002K-T1-GE3
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Краткое описание:
N-CH MOSFET, 60V, 300mA, SOT-23, Surface Mount
Дополнительная информация
N-channel MOSFET, general purpose small signal transistor in a SOT-23 surface mount package. Features 60V drain-source breakdown voltage, 300mA continuous drain current, and 2 Ohm maximum drain-source on-resistance. Operates from -55°C to 150°C with a 350mW power dissipation. Includes 1V threshold voltage and 25ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Voltage | 60V |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2R |
| Nominal Vgs | 2V |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 30pF |
| Power Dissipation | 350mW |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
| Drain to Source Breakdown Voltage | 60V |
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