2N7002T,215
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Краткое описание:
N-CH MOSFET 60V 0.3A SOT-23 Surface Mount
Дополнительная информация
N-channel enhancement mode MOSFET, single element, 60V drain-source voltage, 0.3A continuous drain current. Features 5000mOhm maximum drain-source resistance at 10V and 25pF typical input capacitance at 10V. Packaged in a 3-pin SOT-23 (TO-236AB) surface-mount plastic package with gull-wing leads, measuring 3mm x 1.4mm x 1mm. Operates from -65°C to 150°C with a maximum power dissipation of 830mW.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-236AB |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOT-23 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.4(Max) |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1(Max) |
| Package Length (mm) | 3(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 830mW |
| Min Operating Temperature | -65°C |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 5000@10VmOhm |
| Typical Input Capacitance @ Vds | 25@10VpF |
| Maximum Continuous Drain Current | 0.3A |
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