2N7002T-7-F
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Краткое описание:
N-Channel MOSFET, 60V, 115mA, 7.5R, SOT-523
Дополнительная информация
N-Channel Metal-Oxide Semiconductor FET for switching applications. Features a 60V drain-source breakdown voltage and 115mA continuous drain current. Offers a maximum drain-source on-resistance of 7.5 Ohms. Packaged in an ultra-small SOT-523 plastic package for surface mounting. Operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Weight | 7.1E-05oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5R |
| Nominal Vgs | 2V |
| JESD-30 Code | R-PDSO-G3 |
| Package/Case | SOT-523 |
| Package Shape | Rectangular |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Current Rating | 115mA |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Terminal Finish | Tin |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150mW |
| Package Body Material | Plastic |
| Transistor Application | SWITCHING |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4R |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 115mA |
| Peak Reflow Temperature (Cel) | 260°C |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7.5R |
| Drain to Source Breakdown Voltage | 60V |
| Time @ Peak Reflow Temperature-Max (s) | 10s |
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