2N7002W-7
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N-Channel MOSFET, 60V, 115mA, SOT-323, Surface Mount
Дополнительная информация
N-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a 60V drain-to-source voltage (Vdss) and 115mA continuous drain current (ID). This single-element transistor offers a low Rds On of 7.5 Ohms and a turn-on delay time of 7ns. Packaged in an ultra-small SOT-323 surface-mount plastic package, it operates within a temperature range of -55°C to 150°C.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000219oz |
| Polarity | N-CHANNEL |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Rds On Max | 7.5R |
| Package/Case | SOT-323 |
| Current Rating | 115mA |
| RoHS Compliant | No |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 50pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.6R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 70V |
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