2PA1774R,115
Снят с производства
Увеличить
Краткое описание:
PNP BJT Transistor, 50V, 150mA, 100MHz, 150mW, SC Package
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 50V and a continuous collector current of -150mA. Offers a transition frequency of 100MHz and a minimum DC current gain (hFE) of 180. Packaged in an SC surface-mount case with tin plating, this RoHS compliant component operates within a temperature range of -65°C to 150°C. Maximum power dissipation is 150mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 180 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SC |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | -150mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
