2SA1037AKT146S
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PNP BJT Transistor, 50V, 150mA, 140MHz, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of 150mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 140MHz. Packaged in SMT3 (SC-59, TO-236-3) with 3 pins, suitable for surface mount applications. RoHS compliant with a maximum power dissipation of 200mW and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| hFE Min | 120 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | -150mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -50V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -150mA |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
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