2SA1163GR(5RMAT1,F

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2SA1163GR(5RMAT1,F - Toshiba
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Краткое описание: PNP BJT Transistor 120V 0.1A S-Mini SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 0.1A. Offers a maximum power dissipation of 150mW and a minimum DC current gain of 350. Housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates across a temperature range of -55°C to 125°C.
PCB 3
ECCN EAR99
PPAP No
Type PNP
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Minimum DC Current Gain 350@2mA@6V
Seated Plane Height (mm) 1.15
Max Operating Temperature 125°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.1A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 100(Typ)MHz
Maximum Collector Base Voltage 120V
Maximum Collector-Emitter Voltage 120V

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