2SA1577T106R
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PNP BJT Transistor, 32V VCEO, 500mA IC, 200MHz fT, SC-70
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -500mA and a collector-emitter breakdown voltage of 32V. This surface mount device is housed in an SC-70 package with 3 pins and offers a transition frequency of 200MHz. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 200mW. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 82 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -32V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 32V |
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