2SA1579T106R
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PNP BJT Transistor, 120V VCEO, 50mA IC, 140MHz fT, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a -120V collector-emitter breakdown voltage (VCEO) and a -50mA continuous collector current. Offers a minimum DC current gain (hFE) of 180 and a transition frequency (fT) of 140MHz. Packaged in a compact SOT-323 (SC-70, UMT3) surface-mount case with 3 pins. RoHS compliant with a maximum power dissipation of 200mW and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 180 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Current Rating | -50mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -120V |
| Package Quantity | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -50mA |
| Collector Base Voltage (VCBO) | -120V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | -120V |
| Collector Emitter Breakdown Voltage | -120V |
| Collector Emitter Saturation Voltage | -500mV |
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