2SA1774T1G

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2SA1774T1G - Onsemi
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Краткое описание: PNP BJT Transistor, 50V VCEO, 100mA IC, 140MHz fT, SOT-416
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-416 package. Features a collector-emitter voltage (VCEO) of 50V, collector current of 100mA, and a transition frequency of 140MHz. Offers a minimum DC current gain (hFE) of 120 and a maximum power dissipation of 150mW. Operates across a temperature range of -55°C to 150°C. This component is RoHS compliant and Halogen Free, supplied in tape and reel packaging with 3000 units per reel.
RoHS Compliant
Width 0.9mm
Height 0.8mm
Length 1.65mm
Series 2SA1774
hFE Min 120
Polarity PNP
Frequency 140MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-416
Max Frequency 30MHz
Current Rating -100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -50V
Package Quantity 3000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 140MHz
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 150mW
Gain Bandwidth Product 140MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -500mV

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