2SA1930(Q,M)
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Краткое описание:
PNP Bipolar Junction Transistor, TO-220-3 Package, 180V 2A 2W
Дополнительная информация
The 2SA1930(Q,M) is a PNP bipolar junction transistor from Toshiba, featuring a TO-220-3 package and a maximum collector current of 2A. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The transistor has a maximum breakdown voltage of 180V and a maximum power dissipation of 2W.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Contact Plating | Copper, Tin, Silver |
| Package Quantity | 500 |
| Power Dissipation | 20W |
| Number of Elements | 1 |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 180V |
| Max Collector Current | 2A |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 180V |
| Collector Emitter Breakdown Voltage | 180V |
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