2SA2039-E
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Краткое описание:
PNP BJT 50V 5A 800mW TO-251 IPAK Through Hole Transistor
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 50V and a maximum DC collector current of 5A. This single-element silicon transistor offers a maximum power dissipation of 800mW and a minimum DC current gain of 200 at 500mA and 2V. Encased in a TO-251 IPAK plastic package with 3 pins and a tab, it operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| Jedec | TO-251 |
| EU RoHS | Yes with Exemption |
| Category | Bipolar Power |
| HTS Code | 8541210075 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 5V1P1 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541210080 |
| Package/Case | IPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 2.3 |
| Package Family Name | TO-251 |
| Package Height (mm) | 5.5 |
| Package Length (mm) | 6.5 |
| Minimum DC Current Gain | 200@500mA@2V |
| Seated Plane Height (mm) | 8.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 5A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Transition Frequency | 360(Typ)MHz |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector-Emitter Voltage | 50V |
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