2SA2097(TE16L1,NQ)

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2SA2097(TE16L1,NQ) - Toshiba
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Краткое описание: PNP BJT Transistor 50V 5A 1000mW TO-252AB Surface Mount
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 50V and a continuous collector current of 5A. Offers a maximum power dissipation of 1000mW and a minimum DC current gain of 200. Packaged in a 3-pin New PW-Mold (TO-252AB) with dimensions of 6.5mm x 5.5mm x 2.3mm. Operates within a temperature range of -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type PNP
Jedec TO-252AB
EU RoHS Yes
Category Bipolar Power
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541290080
Package/Case New PW-Mold
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Weight (g) 0.36
Package Width (mm) 5.5
Package Height (mm) 2.3
Package Length (mm) 6.5
Radiation Hardening No
Minimum DC Current Gain [email protected]@2V|[email protected]@2V
Seated Plane Height (mm) 2.4
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 5A
Maximum Emitter Base Voltage 7V
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 50V

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