2SA2153-TD-E
Производится
Увеличить
Краткое описание:
PNP Bipolar Junction Transistor 50V 2A 420MHz 3.5W TO-243AA
Дополнительная информация
The 2SA2153-TD-E is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 2A. It has a gain bandwidth product of 420MHz and a maximum power dissipation of 3.5W. The transistor is packaged in a TO-243AA package and is lead-free. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| Max Frequency | 1MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Transition Frequency | 420MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Power Dissipation | 3.5W |
| Gain Bandwidth Product | 420MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Collector Base Voltage (VCBO) | -50V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -200mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
