2SB1181TLQ
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Краткое описание:
PNP BJT Transistor, -80V, -1A, 100MHz, TO-252-3
Дополнительная информация
PNP bipolar junction transistor in a TO-252-3 (SC-63) surface mount package. Features a maximum collector-emitter voltage (VCEO) of 80V, continuous collector current of -1A, and a maximum power dissipation of 10W. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| Current Rating | -1A |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | -80V |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Power Dissipation | 10W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -400mV |
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