2SB1182TLQ
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PNP BJT Transistor, 32V VCEO, 2A IC, 100MHz fT, TO-252
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -2A. Offers a minimum DC current gain (hFE) of 82 and a transition frequency of 100MHz. Packaged in a TO-252-3 (SC-63) surface-mount case with copper and tin plating. Operates from -55°C to 150°C with a maximum power dissipation of 1W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 82 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | -32V |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 2A |
| Max Power Dissipation | 10W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 800mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
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