2SB1198KT146R
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PNP BJT Transistor, 80V, 500mA, 180MHz, TO-236-3
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Designed for surface mounting in a TO-236-3 package with copper, tin, and silver contact plating. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -80V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -200mV |
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