2SB1201T-TL-E

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2SB1201T-TL-E - Onsemi
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Краткое описание: PNP BJT 50V 2A DPAK SMT Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage and 2A continuous collector current. Dissipates up to 800mW with a minimum DC current gain of 200. Housed in a 3-pin DPAK (TO-252) plastic package with gull-wing leads, measuring 6.5mm x 5.5mm x 2.3mm. Operates across a temperature range of -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type PNP
Jedec TO-252AB
EU RoHS Yes with Exemption
Category Bipolar Power
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code 5V1P1
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 5.5
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.3
Package Length (mm) 6.5
Minimum DC Current Gain 200@100mA@2V
Seated Plane Height (mm) 2.7(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 800mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 2A
Maximum Emitter Base Voltage 6V
Maximum Transition Frequency 150(Typ)MHz
Maximum Collector Base Voltage 60V
Maximum Collector-Emitter Voltage 50V

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