2SB1427T100E
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Краткое описание:
PNP BJT Transistor, 2A, 20V, 90MHz, SC-62, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 390 and a transition frequency of 90MHz. Packaged in a surface-mount TO-243AA (SC-62) with 3 pins, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| hFE Min | 390 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| Max Frequency | 100MHz |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 90MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 90MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | -20V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -500mV |
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