2SB1689T106
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PNP BJT Transistor, 1.5A I(C), 12V V(BR)CEO, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-323 (SC-70) 3-pin surface mount package. Features a continuous collector current of -1.5A, collector-emitter breakdown voltage of 12V, and a transition frequency of 400MHz. Offers a minimum DC current gain (hFE) of 270 and a maximum collector-emitter saturation voltage of -110mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 270 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Max Frequency | 100MHz |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 400MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 400MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1.5A |
| Collector Base Voltage (VCBO) | -15V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | -12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -110mV |
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