2SB1690KT146
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 2A, 12V, 360MHz, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -2A, a collector-emitter breakdown voltage of 12V, and a transition frequency of 360MHz. This component offers a minimum DC current gain (hFE) of 270 and a maximum power dissipation of 200mW. Operating temperature range spans from -55°C to 150°C. Packaged in SMT3 (SC-59) with 3 pins, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1mm |
| Length | 2.9mm |
| hFE Min | 270 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Max Frequency | 100MHz |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Transition Frequency | 360MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2A |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 360MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | -15V |
| Collector-emitter Voltage-Max | 180mV |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -120mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
