2SB1694T106
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PNP BJT Transistor, 1A, 30V, 320MHz, SC Package
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage and a continuous collector current of -1A. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 320MHz. Packaged in a compact UMT3 (SC-70) surface-mount package with 3 pins. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 270 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Max Frequency | 100MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -30V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 320MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 320MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | 380mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -380mV |
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