2SB1695KT146
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PNP BJT Transistor, 30V VCEO, 1.5A IC, 280MHz, SC-59 SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1.5A. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 280MHz. Packaged in an SC-59 surface-mount (SMD/SMT) case with 3 pins, measuring 2.9mm x 1.6mm x 1mm. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1mm |
| Length | 2.9mm |
| hFE Min | 270 |
| Polarity | PNP |
| Frequency | 280MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 100MHz |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 280MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 280MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -1.5A |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | 370mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -200mV |
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