2SB1705TL
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PNP BJT Transistor, 3A I(C), 12V V(BR)CEO, 280MHz fT, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -3A and a collector-emitter breakdown voltage of 12V. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 280MHz. Packaged in a TSMT3 (TO-236-3) surface-mount package with 3 pins. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 270 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 280MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 3A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 280MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -3A |
| Collector Base Voltage (VCBO) | -15V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | -12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -120mV |
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