2SB1731TL
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PNP BJT Transistor, 30V, 1.5A, 280MHz, SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -1.5A and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 280MHz. Designed with a TUMT3 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 270 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 280MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 400mW |
| Gain Bandwidth Product | 280MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -1.5A |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | 370mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -200mV |
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