2SB852KT146B
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Краткое описание:
PNP BJT Transistor, 32V VCEO, 300mA IC, 200MHz, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 300mA. Offers a high minimum DC current gain (hFE) of 5000 and a transition frequency of 200MHz. Packaged in a compact SMT3 (3-pin) surface-mount package with dimensions of 2.9mm (L) x 1.6mm (W) x 1.1mm (H). Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 2.9mm |
| hFE Min | 5000 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | -300mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -32V |
| Package Quantity | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 300mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | -1.5V |
