2SC2216(TPE2,F)

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2SC2216(TPE2,F) - Toshiba
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Краткое описание: RF NPN BJT Transistor, 45V, 0.05A, 300mW, TO-92
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN RF Bipolar Junction Transistor (BJT) designed for through-hole mounting. Features a maximum collector-emitter voltage of 45V and a maximum DC collector current of 0.05A, with a power dissipation of 300mW. This single-element transistor operates within a temperature range of -55°C to 125°C and boasts a minimum transition frequency of 300MHz. Packaged in a 3-pin TO-92 plastic header style with formed leads.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec TO-92
EU RoHS Yes
Material Si
Mounting Through Hole
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Formed
Package/Case TO-92
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.1(Max)
Typical Power Gain 29(Min)dB
Package Description Plastic Header Style Package
Package Family Name TO-92
Package Height (mm) 4.7(Max)
Package Length (mm) 5.1(Max)
Radiation Hardening No
Minimum DC Current Gain [email protected]@12.5V
Seated Plane Height (mm) 4.7(Max) + 1.8
Max Operating Temperature 125°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Typical Output Capacitance 2(Max)pF
Number of Elements per Chip 1
Operational Bias Conditions 12.5V/12.5mA
Maximum DC Collector Current 0.05A
Maximum Emitter Base Voltage 4V
Maximum Transition Frequency 300(Min)MHz
Minimum DC Current Gain Range 30 to 50
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 45V
Maximum Base Emitter Saturation Voltage [email protected]@15mAV
Maximum Collector-Emitter Saturation Voltage [email protected]@15mAV

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