2SC2712GR(T5RFUS,F

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2SC2712GR(T5RFUS,F - Toshiba
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Краткое описание: NPN BJT 50V 0.15A SMT Transistor
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage, 0.15A maximum collector current, and 150mW power dissipation. This single-element transistor is housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operating temperature range is -55°C to 125°C, with a minimum DC current gain of 200 at 2mA/6V and a transition frequency of 80MHz minimum.
PCB 3
ECCN EAR99
Type NPN
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case S-Mini
AEC Qualified Yes
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Minimum DC Current Gain 200@2mA@6V
Seated Plane Height (mm) 1.15
Max Operating Temperature 125°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.15A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 80(Min)MHz
Maximum Collector Base Voltage 60V
Maximum Collector-Emitter Voltage 50V

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