2SC2714-Y(TE85L,F)

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2SC2714-Y(TE85L,F) - Toshiba
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Краткое описание: RF NPN BJT Transistor, 30V, 0.02A, 100mW, S-Mini SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor for surface mount applications. Features a 3-pin S-Mini package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates with a maximum collector-emitter voltage of 30V and a maximum collector current of 0.02A, offering 100mW power dissipation. Achieves a typical transition frequency of 550MHz and a typical power gain of 23dB, with a maximum noise figure of 5dB. Suitable for operation between -55°C and 125°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Typical Power Gain 23dB
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Maximum Noise Figure 5dB
Minimum DC Current Gain 100@1mA@6V
Seated Plane Height (mm) 1.15
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Operational Bias Conditions 6V/1mA
Maximum DC Collector Current 0.02A
Maximum Emitter Base Voltage 4V
Maximum Transition Frequency 550(Typ)MHz
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 40V
Maximum Collector-Emitter Voltage 30V

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