2SC2881-Y(T2LCANOF

Производится
2SC2881-Y(T2LCANOF - Toshiba
Увеличить
Краткое описание: NPN BJT 120V 0.8A 120MHz PW-Mini SMT Transistor
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 120V and a maximum DC collector current of 0.8A. This single-element transistor is housed in a compact PW-Mini surface-mount package with 4 pins (3+Tab) and offers a maximum power dissipation of 1000mW. Operating temperature range is -55°C to 150°C, with a typical transition frequency of 120MHz.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Category Bipolar Power
HTS Code 8541290075
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 4
Automotive No
Schedule B 8541290080
Package/Case PW-Mini
AEC Qualified No
Configuration Single Dual Collector
Package Weight (g) 0.05
Package Width (mm) 2.5
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Radiation Hardening No
Minimum DC Current Gain 120@100mA@5V
Seated Plane Height (mm) 1.6(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.8A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 120(Typ)MHz
Maximum Collector Base Voltage 120V
Maximum Collector-Emitter Voltage 120V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.