2SC3326-B(T5LSON,F

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2SC3326-B(T5LSON,F - Toshiba
Краткое описание: NPN BJT Transistor, 20V, 0.3A, S-Mini SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor for surface mount applications. Features a 20V collector-emitter voltage, 0.3A maximum collector current, and 150mW power dissipation. Packaged in a 3-pin S-Mini (S-LSON) with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Offers a minimum DC current gain of 350 at 4mA/2V and operates within a temperature range of -55°C to 125°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Minimum DC Current Gain 350@4mA@2V
Seated Plane Height (mm) 1.15
Max Operating Temperature 125°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.3A
Maximum Emitter Base Voltage 25V
Maximum Transition Frequency 30(Typ)MHz
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 20V

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