2SC3326-B(TE85R,F)

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2SC3326-B(TE85R,F) - Toshiba
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Краткое описание: NPN BJT Transistor, 20V, 0.3A, 150mW, SOT, 3-Pin SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage and 0.3A maximum collector current. This single-element transistor offers a minimum DC current gain of 350 at 4mA and 2V. Housed in a 3-pin S-Mini (SOT) package with gull-wing leads, it has a maximum power dissipation of 150mW. Operating temperature range is -55°C to 125°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Description Small Outline Transistor
Package Family Name SOT
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Minimum DC Current Gain 350@4mA@2V
Seated Plane Height (mm) 1.15
Max Operating Temperature 125°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.3A
Maximum Emitter Base Voltage 25V
Maximum Transition Frequency 30(Typ)MHz
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 20V

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