2SC4097T106Q
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 32V VCEO, 500mA IC, 250MHz, SC-70, SMT
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a 500mA Continuous Collector Current (IC). Operates with a 250MHz Transition Frequency (fT) and a minimum hFE of 120. Packaged in a compact UMT3 (SC-70) surface-mount package with 3 pins. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | NPN |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 32V |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
