2SC4102T106R
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NPN BJT Transistor, 120V VCEO, 50mA IC, 140MHz fT, SC-70
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V Collector Emitter Breakdown Voltage (VCEO) and 50mA Continuous Collector Current (IC). Operates with a 140MHz Gain Bandwidth Product (fT) and a maximum operating temperature of 150°C. Packaged in a compact SC-70 surface mount case with 3 pins, suitable for tape and reel packaging. Compliant with RoHS standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 180 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Max Frequency | 100MHz |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 25V |
| Package Quantity | 3000 |
| Reach SVHC Compliant | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 50mA |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 500mV |
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