2SC4102T106S
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NPN BJT Transistor, 120V, 50mA, 140MHz, SC-70, SMT
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 120V collector-emitter breakdown voltage (V(BR)CEO) and a 50mA continuous collector current (I(C)). Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 140MHz. Housed in a 3-pin SC-70 surface-mount package with copper, tin, and silver contact plating. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 180 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 25V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 50mA |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 500mV |
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