2SC4132T100R
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NPN BJT Transistor, 120V, 2A, 80MHz, TO-243AA, SMT
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V collector-emitter breakdown voltage and a 2A continuous collector current. Offers a minimum DC current gain (hFE) of 82 and a transition frequency of 80MHz. Packaged in a TO-243AA (MPT3, SC-62) surface mount configuration with 3 pins. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 82 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | 120V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 2A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 80MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 2A |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 2V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 2V |
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