2SC4684(LB)

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2SC4684(LB) - Toshiba
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Краткое описание: NPN BJT Transistor, 20V, 5A, TO-252AB, Surface Mount
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 20V collector-emitter voltage and 5A continuous collector current. This single-element, silicon transistor is housed in a 3-pin TO-252AB (New PW-Mold) surface-mount package with dimensions of 6.5mm x 5.5mm x 2.3mm. Offers a maximum power dissipation of 1000mW and a minimum DC current gain of 800 at 0.5A/2V. Operates across a temperature range of -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-252AB
Category Bipolar Power
HTS Code 8541290075
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541290080
Package/Case New PW-Mold
AEC Qualified No
Configuration Single
Package Weight (g) 0.36
Package Width (mm) 5.5
Package Height (mm) 2.3
Package Length (mm) 6.5
Radiation Hardening No
Minimum DC Current Gain [email protected]@2V|250@4A@2V
Seated Plane Height (mm) 2.4
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 5A
Maximum Emitter Base Voltage 8V
Maximum Transition Frequency 150(Typ)MHz
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 20V

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