2SC4915-Y(TE85L,F)
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Краткое описание:
RF NPN BJT Transistor, 30V, 0.02A, 100mW, SOT-416, SMT
Дополнительная информация
NPN RF Bipolar Junction Transistor for surface mount applications. Features a 30V maximum collector-emitter voltage and 0.02A maximum DC collector current. Offers 100mW maximum power dissipation and a typical transition frequency of 550MHz. Housed in a 3-pin SOT-416 (SSM) plastic package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Minimum DC current gain is 100 at 1mA/6V, with a typical power gain of 23dB and a maximum noise figure of 5dB.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Jedec | SOT-416 |
| EU RoHS | Yes |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Package/Case | SSM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 0.8 |
| Typical Power Gain | 23dB |
| Package Family Name | SSM |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 1.6 |
| Maximum Noise Figure | 5dB |
| Minimum DC Current Gain | 100@1mA@6V |
| Seated Plane Height (mm) | 0.9(Max) |
| Max Operating Temperature | 125°C |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 6V/1mA |
| Maximum DC Collector Current | 0.02A |
| Maximum Emitter Base Voltage | 4V |
| Maximum Transition Frequency | 550(Typ)MHz |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Collector Base Voltage | 40V |
| Maximum Collector-Emitter Voltage | 30V |
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