2SC5084(TE85L,F)

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2SC5084(TE85L,F) - Toshiba
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Краткое описание: RF NPN BJT Transistor, 12V, 0.08A, 7GHz, S-Mini SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V collector-emitter voltage, 0.08A DC collector current, and 150mW power dissipation. Operates with a maximum transition frequency of 7000MHz and a typical noise figure of 2dB. Housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Typical Power Gain 16.5dB
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Maximum Noise Figure 2dB
Seated Plane Height (mm) 1.15
Max Operating Temperature 125°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Typical Output Capacitance 1pF
Number of Elements per Chip 1
Operational Bias Conditions 10V/20mA
Maximum DC Collector Current 0.08A
Maximum Emitter Base Voltage 3V
Maximum Transition Frequency 7000(Typ)MHz
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 12V

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