2SC5085-Y(5LTOY1,F

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2SC5085-Y(5LTOY1,F - Toshiba
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Краткое описание: RF NPN BJT Transistor 12V 0.08A 100mW SOT-323 SM
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Transistor, single configuration, for surface mount applications. Features a 3-pin USM package (SOT-323) with dimensions of 2mm (L) x 1.25mm (W) x 0.9mm (H). Operates with a maximum collector-emitter voltage of 12V and a maximum collector current of 0.08A, with a power dissipation of 100mW. Achieves a typical transition frequency of 7000MHz and a maximum noise figure of 2dB.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-323
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Width (mm) 1.25
Typical Power Gain 16.5dB
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Maximum Noise Figure 2dB
Minimum DC Current Gain 120@20mA@10V
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Typical Output Capacitance 1pF
Number of Elements per Chip 1
Operational Bias Conditions 10V/20mA
Maximum DC Collector Current 0.08A
Maximum Emitter Base Voltage 3V
Maximum Transition Frequency 7000(Typ)MHz
Minimum DC Current Gain Range 120 to 200
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 12V

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