2SC5085-Y(TE85L,F)

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2SC5085-Y(TE85L,F) - Toshiba
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Краткое описание: RF NPN BJT Transistor | 12V | 0.08A | 100mW | SOT-323 | SM
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF BJT transistor for surface mount applications. Features a 12V collector-emitter voltage, 0.08A collector current, and 100mW power dissipation. Operates with a 10V/20mA bias, offering a minimum DC current gain of 120 at 20mA/10V and a maximum transition frequency of 7000MHz. Housed in a 3-pin USM (SOT-323) plastic package with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-323
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.006
Package Width (mm) 1.25
Typical Power Gain 16.5dB
Package Family Name USM
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Maximum Noise Figure 2dB
Minimum DC Current Gain 120@20mA@10V
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Typical Output Capacitance 1pF
Number of Elements per Chip 1
Operational Bias Conditions 10V/20mA
Maximum DC Collector Current 0.08A
Maximum Emitter Base Voltage 3V
Maximum Transition Frequency 7000(Typ)MHz
Minimum DC Current Gain Range 120 to 200
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 12V

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