2SC5086(TE85L,F)

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2SC5086(TE85L,F) - Toshiba
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Краткое описание: RF Transistor NPN 12V 0.08A SOT-416 7000MHz
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF BJT transistor for surface mount applications, featuring a 3-pin SSM (SOT-416) plastic package with gull-wing leads. This single-element silicon transistor offers a maximum collector-emitter voltage of 12V and a maximum DC collector current of 0.08A. Key performance specifications include a maximum transition frequency of 7000MHz, a maximum noise figure of 2dB, and typical power gain of 16.5dB. Operating temperature range is -55°C to 125°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-416
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Package/Case SSM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 0.8
Typical Power Gain 16.5dB
Package Family Name SSM
Package Height (mm) 0.7
Package Length (mm) 1.6
Radiation Hardening No
Maximum Noise Figure 2dB
Seated Plane Height (mm) 0.9(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Typical Output Capacitance 1pF
Number of Elements per Chip 1
Operational Bias Conditions 10V/20mA
Maximum DC Collector Current 0.08A
Maximum Emitter Base Voltage 3V
Maximum Transition Frequency 7000(Typ)MHz
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 12V

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