2SC5086-O(TE85L,F)
Производится
Увеличить
Краткое описание:
RF NPN BJT Transistor, 12V, 80mA, SOT-416, 700MHz
Дополнительная информация
NPN RF BJT transistor, single configuration, silicon material, designed for surface mount applications. Features a 3-pin SSM (SOT-416) package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Operates with a maximum collector-emitter voltage of 12V and a maximum collector current of 0.08A. Offers a minimum DC current gain of 80 at 20mA/10V, a maximum transition frequency of 7000MHz, and a maximum noise figure of 2dB. Suitable for operation between -55°C and 125°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Jedec | SOT-416 |
| EU RoHS | Yes |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Package/Case | SSM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 0.8 |
| Package Family Name | SSM |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 1.6 |
| Radiation Hardening | No |
| Maximum Noise Figure | 2dB |
| Minimum DC Current Gain | 80@20mA@10V |
| Seated Plane Height (mm) | 0.9(Max) |
| Max Operating Temperature | 125°C |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Typical Output Capacitance | 1pF |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 10V/20mA |
| Maximum DC Collector Current | 0.08A |
| Maximum Emitter Base Voltage | 3V |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Collector Base Voltage | 20V |
| Maximum Collector-Emitter Voltage | 12V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
