2SC5086-Y(T5LCL,F)

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2SC5086-Y(T5LCL,F) - Toshiba
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Краткое описание: RF NPN BJT Transistor, 12V, 0.08A, 7000MHz, SOT-416
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V maximum collector-emitter voltage and 0.08A maximum DC collector current. This single-element transistor operates with a 7000MHz typical transition frequency and offers a 2dB maximum noise figure. Packaged in a 3-pin SSM (SOT-416) plastic lead-frame SMT with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Minimum DC current gain is 120 at 10V/20mA, with a typical power gain of 16.5dB.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-416
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Package/Case SSM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 0.8
Typical Power Gain 16.5dB
Package Family Name SSM
Package Height (mm) 0.7
Package Length (mm) 1.6
Radiation Hardening No
Maximum Noise Figure 2dB
Minimum DC Current Gain 120@20mA@10V
Seated Plane Height (mm) 0.9(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Typical Output Capacitance 1pF
Number of Elements per Chip 1
Operational Bias Conditions 10V/20mA
Maximum DC Collector Current 0.08A
Maximum Emitter Base Voltage 3V
Maximum Transition Frequency 7000(Typ)MHz
Minimum DC Current Gain Range 120 to 200
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 12V

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