2SC5095(TE85L,F)

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2SC5095(TE85L,F) - Toshiba
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Краткое описание: RF Transistor NPN 10V 0.015A SOT-323 3-Pin SM
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor, single configuration, silicon material, designed for surface mount applications. Features a 3-pin USM package (SOT-323) with dimensions of 2mm x 1.25mm x 0.9mm. Operates with a maximum collector-emitter voltage of 10V and a maximum DC collector current of 0.015A. Achieves a typical transition frequency of 10000MHz, a maximum noise figure of 3dB, and a typical power gain of 13dB under 6V/7mA bias conditions. Rated for operation between -55°C and 125°C with a maximum power dissipation of 100mW.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-323
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Width (mm) 1.25
Typical Power Gain 13dB
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Maximum Noise Figure 3dB
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Typical Output Capacitance 0.5pF
Number of Elements per Chip 1
Operational Bias Conditions 6V/7mA
Maximum DC Collector Current 0.015A
Maximum Emitter Base Voltage 1.5V
Maximum Transition Frequency 10000(Typ)MHz
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 10V

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