2SC5095-O(TE85R,F)

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2SC5095-O(TE85R,F) - Toshiba
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Краткое описание: RF NPN BJT Transistor, 10V, 15mA, SOT-323, 3-Pin, SM
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor for high-frequency applications. Features a 10V collector-emitter voltage and 15mA collector current. Packaged in a 3-pin USM (SOT-323) surface-mount case with dimensions of 2mm x 1.25mm x 0.9mm. Offers a minimum DC current gain of 80 at 6V/7mA and a maximum transition frequency of 10000MHz. Operates across a temperature range of -55°C to 125°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-323
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Width (mm) 1.25
Typical Power Gain 13dB
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Maximum Noise Figure 3dB
Minimum DC Current Gain 80@7mA@6V
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Typical Output Capacitance 0.5pF
Number of Elements per Chip 1
Operational Bias Conditions 6V/7mA
Maximum DC Collector Current 0.015A
Maximum Emitter Base Voltage 1.5V
Maximum Transition Frequency 10000(Typ)MHz
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 10V

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