2SC5111-Y(TE85L,F)

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2SC5111-Y(TE85L,F) - Toshiba
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Краткое описание: RF NPN BJT Transistor, 10V, 0.06A, 100mW, 3-Pin SMT
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN RF BJT transistor for surface mount applications. Features a 10V maximum collector-emitter voltage and 0.06A maximum DC collector current. Offers 100mW maximum power dissipation and a minimum DC current gain of 120 at 5mA/5V. Operates with a typical transition frequency of 6000MHz and includes a 0.9pF typical output capacitance. Packaged in a 3-pin SSM (SSM) lead-frame SMT with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Package/Case SSM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 0.8
Package Family Name SSM
Package Height (mm) 0.7
Package Length (mm) 1.6
Radiation Hardening No
Minimum DC Current Gain 120@5mA@5V
Seated Plane Height (mm) 0.9(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Typical Output Capacitance 0.9pF
Number of Elements per Chip 1
Operational Bias Conditions 5V/5mA
Maximum DC Collector Current 0.06A
Maximum Emitter Base Voltage 3V
Maximum Transition Frequency 6000(Typ)MHz
Minimum DC Current Gain Range 120 to 200
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 10V

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