2SC5227A-5-TB-E
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Краткое описание:
RF NPN BJT Transistor 7GHz 10V 70mA 200mW SC-59 T/R
Дополнительная информация
NPN RF Bipolar Junction Transistor designed for high-frequency applications. Features a 10V collector-emitter breakdown voltage and a 70mA maximum collector current. Operates up to 7GHz with a gain bandwidth product of 7GHz. Housed in a 3-pin SC-59 (TO-236-3) package with matte tin plating, this RoHS compliant component offers 200mW power dissipation and a minimum hFE of 50.
| Gain | 12dB |
| RoHS | Compliant |
| Width | 1.5mm |
| Height | 1.1mm |
| Length | 2.9mm |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 7GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Max Frequency | 7GHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Transition Frequency | 7GHz |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 70mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 7GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 2V |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector Emitter Breakdown Voltage | 10V |
